Photoluminescence study of carrier transfer among vertically aligned double-stacked InAs/GaAs quantum dot layers

Applied Physics Letters

Volumn 81, Issue 13, 2002, Pages 2469-2471

  Mazur, Yu I ^a   Wang, X ^a   Wang, Z M ^a   Salamo, G J ^a   Xiao, M ^a   Kissel, H ^b  

^a UNIVERSITY OF ARKANSAS   (United States)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSFER; DOUBLE LAYERS; INAS; INAS/GAAS; NONRESONANT; PHOTOLUMINESCENCE PROPERTIES; QUANTUM DOT LAYERS; SEED LAYER; SELF-ORGANIZE; SELF-ORGANIZED QUANTUM DOTS; TEMPERATURE BEHAVIOR; THERMAL EMISSIONS; TRANSITION ENERGY; TUNNELING PROCESS; VERTICALLY ALIGNED;

INDIUM ARSENIDE; PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79955984241     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1510157     Document Type: Article

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