Temperature dependence of carrier dynamics for InAs/GaAs quantum dot infrared photodetectors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 1909-1912

  Huang, Chun Yuan ^a   Ou, Tzu Min ^a   Chou, Shu Ting ^a   Tsai, Cheng Shuan ^a   Wu, Meng Chyi ^a   Lin, Shih Yen ^b   Chi, Jim Yong ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

QUANTUM-DOT INFRARED PHOTODETECTORS (QDIP); WETTING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 27744479451     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2008271     Document Type: Article

References (10)

1. S. Y. Lin, Y. R. Tsai, and S. C. Lee, Appl. Phys. Lett. 83, 752 (2003).
2. H. C. Liu, Opto-Electron. Rev. 11, 1 (2003).
3. S. Fafard, R. Leon, D. Leonard, J. L. Merz, and P. M. Petroff, Phys. Rev. B 52, 5752 (1995).
4. H. C. Liu, M. Gao, J. McCaffrey, Z. R. Wasilewski, and S. Fafard, Appl. Phys. Lett. 78, 79 (2001).
5. S. W. Lee, K. Hirakawa, and Y. Shimada, Appl. Phys. Lett. 75, 1428 (1999).
6. D. Leonard, K. Pond, and P. M. Petroff, Phys. Rev. B 50, 11687 (1994).
7. S. Hinooda, S. Loualiche, B. Lambert, N. Bertru, M. Paillard, X. Marie, and T. Amand, Appl. Phys. Lett. 78, 3052 (2001).
8. M. Grundmann, N. N. Ledentsov, O. Siter, D. Bimberg, V. M. Ustinov, P. S. Kop'ev, and Zh. I. Alferov, Appl. Phys. Lett. 68, 979 (1996).
9. K. Mukai, N. Ohtsuka, H. Shoji, and M. Sugawara, Appl. Phys. Lett. 68, 3013 (1996).
10. S. F. Tang, S. Y. Lin, and S. C. Lee, Appl. Phys. Lett. 78, 2428 (2001).