Dual-gate operation of a carbon nanotube field effect transistor with a local gate electrode

Journal of the Korean Physical Society

Volumn 51, Issue 4, 2007, Pages 1357-1361

  Park, Ji Yong ^a   Kim, Yongsun ^a   Oh, Young Mu ^a  

^a Ajou University   (South Korea)

Author keywords

Field effect transistor; Nanotube; Transport

Indexed keywords

EID: 35649023631     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.51.1357     Document Type: Article

References (36)

1. W. Liang, M. Bockrath, D. Bozovic, J. H. Hafner, M. Tinkham and H. Park, Nature 411, 665 (2001).
2. A. Javey, J. Guo, Q. Wang, M. Lundstrom and H. Dai, Nature 424, 654 (2003).
3. Z. Yao, C. L. Kane and C. Dekker, Phys. Rev. Lett. 84, 2941 (2000).
4. A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom and H. Dai, Phys. Rev. Lett. 92, 106804 (2004).
5. J.-Y. Park, S. Rosenblatt, Y. Yaish, V. Sazonova, H. Üstünel, S. Braig, T. A. Arias, P. W. Brouwer and P. L. McEuen, Nano Lett. 4, 517 (2004).
6. T. Dürkop, S. A. Getty, E. Cobas and M. S. Fuhrer, Nano Lett. 4, 35 (2004).
7. X. Zhou, J.-Y. Park, S. Huang, J. Liu and P. L. McEuen, Phys. Rev. Lett. 95, 146805 (2005).
8. P. Avouris, MRS Bull. 29, 403 (2004).
9. H. Dai, A. Javey, E. Pop, D. Mann, W. Kim and Y. Lu, NANO 1, 1 (2006).
10. R. Martel, T. Schmidt, H. R. Shea, T. Hertel and P. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
11. S. J. Tans, A. R. M. Verschueren and C. Dekker, Nature 393, 49 (1998).
12. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. Mcintyre, P. McEuen, M. Lundstrom and H. Dai, Nature Mater. 1, 241 (2002).
13. R. V. Seidel, A. P. Graham, J. Kretz, B. Rajasekharan, G. S. Duesberg, M. Liebau, E. Unger, F. Kreupl and W. Hoenlein, Nano Lett. 5, 147 (2005).
14. V. Derycke, R. Martel, J. Appenzeller and P. Avouris, Nano Lett. 1, 453 (2001).
15. A. Javey, Q. Wang, A. Ural, Y. M. Li and H. J. Dai, Nano Lett. 2, 929 (2002).
16. Z. H. Chen, J. Appenzeller, Y. M. Lin, J. Sippel-Oakley, A. G. Rinzler, J. Y. Tang, S. J. Wind, P. M. Solomon and P. Avouris, Science 311, 1735 (2006).
17. Y. C. Tseng, P. Q. Xuan, A. Javey, R. Malloy, Q. Wang, J. Bokor and H. J. Dai, Nano Lett. 4, 123 (2004).
18. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller and P. Avouris, Phys. Rev. Lett. 89, 106801 (2002).
19. N. Mason, M. J. Biercuk and C. M. Marcus, Science 303, 655 (2004).
20. L. Yu-Ming, J. Appenzeller, C. Zhihong, C. Zhi-Gang, C. Hui-Ming and P. Avouris, IEEE Electron Dev. Lett. 26, 823 (2005).
21. J.-Y. Park, Nanotechnol. 18, 095202 (2007).
22. K. Alam and R. Lake, Appl. Phys. Lett. 87, 073104 (2005).
23. J. Kong, H. T. Soh, A. M. Cassell, C. F. Quate and H. Dai, Nature 395, 878 (1998).
24. J.-R. Kim, B.-K. Kim, S.-R. Kim, J.-J. Kim, J.-O. Lee and J. Kim, J. Korean Phys. Soc. 49, 1694 (2006).
25. Y. Yaish, J.-Y. Park, S. Rosenblatt, V. Sazonova, M. Brink and P. L. McEuen, Phys. Rev. Lett. 92, 046401 (2004).
26. J.-Y. Park, Y. Yaish, M. Brink, S. Rosenblatt and P. L. McEuen, Appl. Phys. Lett. 80, 4446 (2002).
27. P. J. de Pablo, C. Gomez-Navarro, J. Colchero, P. A. Serena, J. Gomez-Herrero and A. M. Baro, Phys. Rev. Lett. 88, 036804 (2002).
28. M. Paillet, P. Poncharal and A. Zahab, Phys. Rev. Lett. 94, 186801 (2005).
29. M. Zdrojek, T. Melin, C. Boyaval, D. Stievenard, B. Jouault, M. Wozniak, A. Huczko, W. Gebicki and L. Adamowicz, Appl. Phys. Lett. 86, 213114 (2005).
30. S. M. Sze, Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981).
31. B. Park, C.-H. Lim, H.-S. Jeon, C.-S. Woo, Y.-S. Hwan, S.-J. Choi, C.-W. Cho, C.-J. Lee and S.-B. Lee, J. Korean Phys. Soc. 49, 828 (2006).
32. D. Mann, A. Javey, J. Kong, Q. Wang and H. J. Dai, Nano Lett. 3, 1541 (2003).
33. Z. H. Chen, J. Appenzeller, J. Knoch, Y. M. Lin and P. Avouris, Nano Lett. 5, 1497 (2005).
34. W. Kim, A. Javey, R. Tu, J. Cao, Q. Wang and H. J. Dai, Appl. Phys. Lett. 87, 173101 (2005).
35. S. Heinze, M. Radosavljevic, J. Tersoff and P. Avouris, Phys. Rev. B 68, 235418 (2003).
36. M. Radosavljevic, M. Freitag, K. V. Thadani and A. T. Johnson, Nano Lett. 2, 761 (2002).