Selective silicon nanoparticle growth on high-density arrays of silicon nitride

Journal of Crystal Growth

Volumn 308, Issue 2, 2007, Pages 269-277

  Coffee, Shawn S ^a   Shahrjerdi, Davood ^a   Banerjee, Sanjay K ^a   Ekerdt, John G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

A1. Nanoparticles; A3. Chemical vapor deposition; B1. Nitrides; B1. Oxides; B1. Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPOLYMERS; NUCLEATION; SILICON; SILICON NITRIDE; SIZE DISTRIBUTION; THIN FILMS;

ADATOM CONCENTRATION; HIGH-DENSITY ARRAYS; NANOPARTICLE DEPOSITION; SILICON NANOPARTICLE GROWTH;

NANOPARTICLES;

EID: 35348890166     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.08.024     Document Type: Article

References (30)

1. Tiwari S., Rana F., Hanafi H., Hartstein A., Crabbe E.F., and Chan K. Appl. Phys. Lett. 68 (1996) 1377
2. Crupi I., Corso D., Lombardo S., Gerardi C., Ammendola G., Nicotra G., Spinella C., Rimini E., and Melanotte M. Mater. Sci. Eng. C 23 (2003) 33
3. International Technology Roadmap for Semiconductors, 2005.
4. Miyazaki S., Hamamoto Y., Yoshida E., Ikeda M., and Hirose M. Thin Solid Films 369 (2000) 55
5. Mazen F., Baron T., Papon A.M., Truche R., and Hartmann J.M. Appl. Surf. Sci. 214 (2003) 359
6. Basa C., and Irene E.A. J. Vac. Sci. Technol. A 17 (1999) 817
7. Coffee S.S., Stanley S.K., and Ekerdt J.G. J. Vac. Sci. Technol. B 24 (2006) 1913
8. Stanley S.K., Joshi S.V., Banerjee S.K., and Ekerdt J.G. J. Vac. Sci. Technol. A 24 (2006) 78
9. Stanley S.K., Joshi S.V., Banerjee S.K., and Ekerdt J.G. Surf. Sci. 600 (2006) L54
10. Leach W.T., Zhu J.H., and Ekerdt J.G. J. Crystal Growth 243 (2002) 30
11. Li Q.M., Krauss J.L., Hersee S., and Han S.M. J. Phys. Chem. C 111 (2006) 779
12. Baron T., Martin F., Mur P., Wyon C., and Dupuy M. J. Crystal Growth 209 (2000) 1004
13. Mason M.S., Holt J.K., and Atwater H.A. Thin Solid Films 458 (2004) 67
14. Venables J.A. Phys. Rev. B 36 (1987) 4153
15. Venables J.A., Spiller G.D.T., and Hanbucken M. Rep. Prog. Phys. 47 (1984) 399
16. Kandel D. Phys. Rev. Lett. 78 (1997) 499
17. Venables J.A. Surf. Sci. 300 (1994) 798
18. Li Q.M., Pattada B., Brueck S.R.J., Hersee S., and Han S.M. J. Appl. Phys. 98 (2005) 073507
19. Guarini K.W., Black C.T., Milkove K.R., and Sandstrom R.L. J. Vac. Sci. Technol. B 19 (2001) 2784
20. Guarini K.W., Black C.T., Zhang Y., Kim H., Sikorski E.M., and Babich I.V. J. Vac. Sci. Technol. B 20 (2002) 2788
21. Ray S.K., Maiti C.K., and Chakraborti N.B. Semicond. Sci. Technol. 8 (1993) 599
22. Baron T., Mazen F., Hartmann J.M., Mur P., Puglisi R.A., Lombardo S., Ammendola G., and Gerardi C. Solid-State Electron. 48 (2004) 1503
23. Leach W.T., Zhu J.H., and Ekerdt J.G. J. Crystal Growth 240 (2002) 415
24. Basa C., Hu Y.Z., Tinani M., and Irene E.A. J. Vac. Sci. Technol. A 16 (1998) 3223
25. Mazen F., Mollard L., Baron T., Decossas S., and Hartmann J.M. Microelectron. Eng. 73-74 (2004) 632
26. Ferguson B.A., Reeves C.T., Safarik D.J., and Mullins C.B. J. Chem. Phys. 113 (2000) 2470
27. Gates S.M. Surf. Sci. 195 (1988) 307
28. Zhu J.H., Leach W.T., Stanley S.K., Ekerdt J.G., and Yan X.M. J. Appl. Phys. 92 (2002) 4695
29. Brune H. Surf. Sci. Rep. 31 (1998) 121
30. Streit D.C., and Allen F.G. J. Appl. Phys. 61 (1987) 2894