Preferential nucleation of silicon nano-crystals on electron beam exposed SiO2 surfaces

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 632-638

  Mazen, F ^a   Mollard, L ^b   Baron, T ^c   Decossas, S ^c   Hartmann, J M ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CEA LETI   (France)

^c CNRS   (France)

Author keywords

Electron beam; Nucleation; Silicon nano crystals

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC INSULATORS; ELECTRON BEAMS; NANOSTRUCTURED MATERIALS; NUCLEATION; PHASE SEPARATION; SILICA; SILICON;

CARRIER TRAPS; SILICON NANO-CRYSTALS; SINGLE ELECTRON MEMORIES (SEM); SINGLE ELECTRON TRANSISTORS (SET);

MICROELECTRONICS;

EID: 2542499186     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00173-X     Document Type: Conference Paper

References (18)

1. Choi B.H., Hwang S.W., Kim I.G., Shin H.C., Kim Yong, Kim E.K. Applied Physics Letters. 73:2003;3129.
2. Tiwari S., Rhana F., Chan K., Hanafi H., Chan W. Applied Physics Letters. 68:1996;1377.
3. Yun F., Hinds B.J., Hatatani S., Oda S., Zhao Q.X., Willander M. Thin Solid Films. 375:2000;137.
4. Ostraat M., De Blauwe J. Materials Research Society Proceedings. 686:2002;A5.2.
5. Nakajima A., Sugita Y., Kawamura K., Tomita H., Yokoama N. Japanese Journal of Applied Physics. 35:1996;189.
6. Baron T., Martin F., Mur P., Wyon C., Dupuy M. Journal of Crystal Growth. 209:2000;1004.
7. Myazaki S., Hamamoto Y., Yoshida E., Ikeda M., Hirose M. Thin Solid Films. 369:2000;55.
8. Mazen F., Baron T., Buffet N., Rochat N., Mur P., Brémond G., Séméria M.N. Journal of the Electrochemical Society. 150:2003;G203.
9. Baron T., Mazen F., Busseret C., Souifi A., Mur P., Séméria M.N., Moriceau H., Aspard B., Gentile P., Magnea N. Microelectronic Engineering. 61-62:2002;511.
10. Kammler M., Hull R., Reuter M.C., Ross F.M. Applied Physics Letters. 82:2003;1093.
11. Mazen F., Baron T., Truche R., Papon A.M., Hartmann J.M. Applied Surface Science. 214:2003;359-363.
12. Boer E.A., Bell L.D., Brongersma M.L., Atwater H.A., Ostraat M.L., Flagan R.C. Applied Physics Letters. 78:2001;3133.
13. O'Keeffe T.W., Handy R.M. Solid State Electronics. 11:1967;261.
14. Allee D.R., Umbach C.P., Boers A.N. Journal of Vacuum Science and Technology B. 9:1991;2838-2841.
15. Stevens M.A., Phillips M.R., Moon A.R. Journal of Applied Physics. 80:1996;4308.
16. Hiroshima H., Komuro M. Japanese Journal of Applied Physics. 32:1993;6153.
17. Hwang D.H., Yasuda T., Ikuta K., Yamasaki S., Tanaka K. Japanese Journal of Applied Physics. 37:1998;1087.
18. Basa C., Tinani M., Irene E.A. Journal of Vacuum Science and Technology A. 16:1998;2466.