Surface reactions and kinetically-driven patterning scheme for selective deposition of Si and Ge nanoparticle arrays on HfO2

Surface Science

Volumn 600, Issue 5, 2006, Pages 54-57

  Stanley, Scott K ^a   Joshi, Sachin V ^a   Banerjee, Sanjay K ^a   Ekerdt, John G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Chemical vapor deposition; Germanium; Metal oxide semiconductor (MOS) structures; Nucleation; Self assembly; Semiconductor insulator interfaces; Thermal desorption spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

DESORPTION; GERMANIUM; HAFNIUM COMPOUNDS; LITHOGRAPHY; MOS DEVICES; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

ADATOMS; SEMICONDUCTOR- INSULATOR INTERFACES; THERMAL DESORPTION SPECTROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 33644595339     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.12.029     Document Type: Article

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