SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1503-1509

Growth and characterization of LPCVD Si quantum dots on insulators

(8) Baron, T a Mazen, F a Hartmann, J M b Mur, P b Puglisi, R A c Lombardo, S c Ammendola, G d Gerardi, C d

a CEA LETI (France)

b CEA GRENOBLE (France)

c CNR (Italy)

d STMICROELECTRONICS (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; NUCLEATION; OXIDATION; PARAMETER ESTIMATION; PARTIAL PRESSURE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY (EFTEM); LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); NANOELECTRONICS; SILICON QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2942676987 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2004.03.015 Document Type: Conference Paper

Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.