Influence of nitrogen proximity from the Si/SiO2 interface on negative bias temperature instability

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 10 A, 2002, Pages

  Tan, S S ^a,b   Chen, Tu Pei ^a   Ang, Chew Hoe ^b   Tan, Yun Ling ^b   Chan, Lap ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Activation energy; Device lifetime; Negative bias temperature instability; Plasma nitridation; Thermal nitridation

Indexed keywords

ACTIVATION ENERGY; DEGRADATION; HOLE TRAPS; NITROGEN; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SILICA;

NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI);

SURFACE CHEMISTRY;

EID: 0036815670     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1031     Document Type: Article

References (14)

1. N. Kimizuka, T. Yamamoto, T. Mogami, K. Yamaguchi, K. Imai and T. Horiuchi: Symp. VLSI Tech. Dig. (1999) p. 73.
2. A.T. Krishnan, V. Reddy and S. Krishnan: IEDM Tech. Dig. (2001) 39.3_1.
3. C.E. Blat, E.H. Nicollian and E.H. Poindexter: J. Appl. Phys. 69 (1991) 1712.
4. N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C.T. Liu, R.C. Keller and T. Horiuchi: Symp. VLSI Tech. Dig. (2000) p. 92.
5. C.H. Ang, C.H. Lek, S.S. Tan, B.J. Cho, T.P. Chen, W. Lin and J.Z. Zhen: Jpn. J. Appl. Phys. 41 (2002) 314.
6. C.H. Liu, M.T. Lee, C.Y. Lin, J. Chen, K. Schruefer, J. Brighten, N. Rovedo, T.B. Hook, M.V. Khare, S.F. Huang, C. Wann, T.C. Chen and T.H. Ning: IEDM Tech. Dig. (2001) 39.2_1.
7. J. Ushio, K. Kushida-Abdelghafar and T. Maruzumi: Ext. Abstr. 2001 Int. Conf. Solid State Dev. & Mat. (2001) p. 158.
8. R. Kraft, T.P. Schneider, W.W. Dostalik and S. Hattangady: J. Vac. Sci. & Technol. B 15 (1997) 967.
9. S.V. Hattangady, H. Niimi and G. Lucovsky: Appl. Phys. Lett. 66 (1995) 3495.
10. E.P. Gusev, H.-C. Lu, E.L. Garfunkel, T. Gustafsson and M.L. Green: IBM J. Res. Dev. 43 (1999) 265.
11. M.L. Green, E.P. Gusev, R. Degraeve and E.L. Garfunkel: J. Appl. Phys. Rev. 90 (2001) 2057.
12. Y.F. Chen, M.H. Lin, C.H. Chou, W.C. Chang, S.C. Huang, Y.J. Chang, K.Y. Fu, M.T. Lee, C.H. Liu and S.K. Fan: Int. Rel. Workshop Final Report (2000) p. 98.
13. S.S. Tan, T.P. Chen, C.-H. Ang, C.-M. Lek, W. Lin, J.Z. Zheng, A. See and L. Chan: Int. Symp. Plasma- & Process-Induced Damage (2002) p. 146.
14. N. Ikarashi, K. Watanabe and Y. Miyamoto: J. Appl. Phys. 90 (2001) 2683.