Strain relaxation and dislocation filtering in metamorphic HBT and HEMT structures grown on GaAs substrates by MBE

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 346-349

  Fastenau, J M ^a   Lubyshev, D ^a   Fang, X M ^a   Doss, C ^a   Wu, Y ^a   Liu, W K ^a   Bals, S ^b   Griffith, Z ^c   Kim, Y M ^c   Rodwell, M J W ^c  

^a IQE INC   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; SUBSTRATES; THERMAL CONDUCTIVITY;

DISLOCATION FILTERING; DISLOCATION PROPAGATION; METAMORPHIC BUFFERS; RELAXATION MECHANISMS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 5044245554     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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