Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 2429-2432

  Cui, L J ^a,b   Zeng, Y P ^a   Wang, B Q ^a   Wu, J ^a   Zhu, Z P ^a   Lin, L Y ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; ANNEALING TEMPERATURES; AS-GROWN; BUFFER LAYER STRUCTURES; GAAS SUBSTRATES; GAAS(001); HALL MEASUREMENTS; INALAS; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; PARASITIC CAPACITANCE; RELATIVE INTENSITY; SHEET CARRIER DENSITIES; SUBBANDS; TEMPERATURE RANGE; THERMAL ANNEALING EFFECTS;

BUFFER LAYERS; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33845422672     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1433174     Document Type: Article

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