Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1899-1911

  McGill, L M ^a   Fitzgerald, E A ^a   Kim, A Y ^b   Huang, J W ^b   Yi, S S ^b   Grillot, P N ^b   Stockman, S A ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b Philips Lumileds Lighting Company   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BRANCH DEFECTS; GRADED BUFFER; HIGH GROWTH TEMPERATURE; STRAIN RELAXATION;

ANNEALING; CHEMICAL BONDS; DEFECTS; DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; PHOSPHORUS; SEMICONDUCTOR MATERIALS; TEMPERATURE CONTROL; TRANSMISSION ELECTRON MICROSCOPY; WSI CIRCUITS;

SEMICONDUCTING INDIUM;

EID: 4944232747     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1775003     Document Type: Article

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