Temperature dependence of threading dislocation density in In 0.2Ga0.8As layers grown on GaAs substrates by metalorganic-vapor phase epitaxy

Journal of Crystal Growth

Volumn 282, Issue 1-2, 2005, Pages 36-44

  Takano, Y ^a   Kobayashi, K ^a   Shirakata, S ^b   Umezawa, M ^a   Fuke, S ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b EHIME UNIVERSITY   (Japan)

Author keywords

A1. Line defects; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials; B2. Semiconducting ternary materials

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

LINE DEFECTS; SEMICONDUCTING III-V MATERIALS; SEMICONDUCTING TERNARY MATERIALS; THREADING DISLOCATIONS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 22644445952     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.089     Document Type: Article

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