Threading dislocations and phase separation in InGaAs layers on GaAs substrates grown by low-temperature metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 A, 2005, Pages 6403-6411

  Takano, Yasushi ^a   Kobayashi, Kazu ^a   Iwahori, Hideaki ^a   Umezawa, Masayoshi ^a   Shirakata, Sho ^b   Fuke, Shunro ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b EHIME UNIVERSITY   (Japan)

Author keywords

Dislocation; Graded buffer layer; InGaAs; Lattice mismatch; Metalorganic vapor phase epitaxy; Phase separation

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

GRADED BUFFER LAYERS; LATTICE MISMATCH;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 31544463560     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6403     Document Type: Article

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