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Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 633-641

Material properties of graded composition inxGa1-xP buffer layers grown on GaP by organometallic vapor phase epitaxy

(4) Hasenohrl S a Novak J a Vavra I a Satka A b

a INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

b SLOVAK UNIVERSITY OF TECHNOLOGY (Slovakia)

Author keywords

A1. Crystal morphology; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V Materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; MORPHOLOGY; OPTIMIZATION; ORGANOMETALLICS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PHENOMENA; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPARENCY; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

BAND GAP CHANGES; BUFFER GROWTH; BUFFER STRUCTURES; SEMICONDUCTING III-V MATERIAL;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 9944245908 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.044 Document Type: Conference Paper

Times cited : (15)

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