SCOPUS 정보 검색 플랫폼

Volumn 18, Issue 4 I, 2000, Pages 1230-1233

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GERMANIUM; INTERFACES (MATERIALS); OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA;

REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

MOS CAPACITORS;

EID: 0034229639 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.582331 Document Type: Article

Times cited : (47)

References (15)

1
- 0020298352
- Q. Hua, J. Rosenberg, J. Ye, and E. S. Yang, J. Appl. Phys. 53, 8969 (1982).
- (1982) J. Appl. Phys. , vol.53 , pp. 8969
- Hua, Q.¹ Rosenberg, J.² Ye, J.³ Yang, E.S.⁴

2
- 0023996676
- D. J. Hymes and J. Rosenberg, J. Electrochem. Soc. 135, 961 (1988).
- (1988) J. Electrochem. Soc. , vol.135 , pp. 961
- Hymes, D.J.¹ Rosenberg, J.²

3
- 0023329946
- D. B. Alford and L. G. Meiners, J. Electrochem. Soc. 134, 979 (1987).
- (1987) J. Electrochem. Soc. , vol.134 , pp. 979
- Alford, D.B.¹ Meiners, L.G.²

4
- 0024127781
- J. J. Rosenberg and S. C. Martin, IEEE Electron Device Lett. 9, 639 (1988).
- (1988) IEEE Electron Device Lett. , vol.9 , pp. 639
- Rosenberg, J.J.¹ Martin, S.C.²

5
- 0001720332
- T. O. Sedgwick, J. Appl. Phys. 39, 5066 (1968).
- (1968) J. Appl. Phys. , vol.39 , pp. 5066
- Sedgwick, T.O.¹

6
- 0016994177
- K. L. Wang and P. V. Gray, J. Electrochem. Soc. 123, 1392 (1976).
- (1976) J. Electrochem. Soc. , vol.123 , pp. 1392
- Wang, K.L.¹ Gray, P.V.²

7
- 0007039255
- T. Yashiro, Jpn. J. Appl. Phys. 9, 740 (1970).
- (1970) Jpn. J. Appl. Phys. , vol.9 , pp. 740
- Yashiro, T.¹

8
- 0019569277
- M. D. Jack and J. Y. M. Lee, J. Electron. Mater. 10, 571 (1981).
- (1981) J. Electron. Mater. , vol.10 , pp. 571
- Jack, M.D.¹ Lee, J.Y.M.²

9
- 0007127783
- D. J. Vitkavage, G. G. Fountain, R. A. Rudder, S. V. Hattangady, and R. J. Markunas, Appl. Phys. Lett. 53, 692 (1988).
- (1988) Appl. Phys. Lett. , vol.53 , pp. 692
- Vitkavage, D.J.¹ Fountain, G.G.² Rudder, R.A.³ Hattangady, S.V.⁴ Markunas, R.J.⁵

10
- 0007037834
- G. Lucovsky, J. J. Wortman, T. Yasuda, X.-L. Lu, V. Misra, S. V. Hattangady, Y. Ma, and B. Hornung, J. Vac. Sci. Technol. B 12, 2839 (1994).
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 2839
- Lucovsky, G.¹ Wortman, J.J.² Yasuda, T.³ Lu, X.-L.⁴ Misra, V.⁵ Hattangady, S.V.⁶ Ma, Y.⁷ Hornung, B.⁸

11
- 24244452897
- D. E. Aspnes and A. A. Studna, Appl. Phys. Lett. 39, 316 (1981).
- (1981) Appl. Phys. Lett. , vol.39 , pp. 316
- Aspnes, D.E.¹ Studna, A.A.²

12
- 0000910922
- T. Yasuda, Y. Ma, S. Habermehl, and G. Lucovsky, J. Vac. Sci. Technol. B 10, 1844 (1992).
- (1992) J. Vac. Sci. Technol. B , vol.10 , pp. 1844
- Yasuda, T.¹ Ma, Y.² Habermehl, S.³ Lucovsky, G.⁴

13
- 84941489643
- D. V. Tsu, G. N. Parsons, G. Lucovsky, and M. W. Watkins, J. Vac. Sci. Technol. A 7, 1115 (1989).
- (1989) J. Vac. Sci. Technol. A , vol.7 , pp. 1115
- Tsu, D.V.¹ Parsons, G.N.² Lucovsky, G.³ Watkins, M.W.⁴

14
- 0000341732
- B. J. Hinds, F. Wang, D. M. Wolfe, C. L. Hinkle, and G. Lucovsky, J. Vac. Sci. Technol. B 16, 2171 (1998).
- (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 2171
- Hinds, B.J.¹ Wang, F.² Wolfe, D.M.³ Hinkle, C.L.⁴ Lucovsky, G.⁵

15
- 0004071496
- Wiley, New York
- D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998).
- (1998) Semiconductor Material and Device Characterization, 2nd Ed.
- Schroder, D.K.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.