An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs

Solid-State Electronics

Volumn 48, Issue 3, 2004, Pages 427-435

  Prégaldiny, Fabien ^a   Lallement, Christophe ^a   Van Langevelde, Ronald ^b   Mathiot, Daniel ^a  

^a ERM PHASE   (France)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Charge sheet model; Compact modeling; Deep submicron MOSFET; Quantum mechanical effects; Surface potential; Transcapacitance

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; MOS CAPACITORS; POISSON DISTRIBUTION; QUANTUM THEORY; SEMICONDUCTOR DOPING;

QUANTUM MECHANICAL EFFECTS (QME); SURFACE POTENTIAL MODEL;

MOSFET DEVICES;

EID: 0344898332     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.09.005     Document Type: Article

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