Nanoscale metal-oxide-semiconductor field-effect transistors: Scaling limits and opportunities

Nanotechnology

Volumn 15, Issue 10, 2004, Pages

  Chen, Qiang ^a   Meindl, James D ^b  

^a ADVANCED MICRO DEVICES   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); MAGNETIC SUSCEPTIBILITY; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; PERMITTIVITY; POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTOR DOPING; THIN FILMS; THRESHOLD VOLTAGE;

CHANNEL DOPING; FRINGE INDUCED BARRIER LOWERING (FIBL); GATE DIELECTRICS; SHORT CHANNEL EFFECTS (SCE);

FIELD EFFECT TRANSISTORS;

EID: 7044235906     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/10/009     Document Type: Conference Paper

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