Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model

Solid-State Electronics

Volumn 48, Issue 5, 2004, Pages 781-787

  Prégaldiny, Fabien ^a   Lallement, Christophe ^a   Mathiot, Daniel ^a  

^a ERM PHASE   (France)

Author keywords

Accumulation layer; Compact model; Inversion layer; MOSFET; Quantum effects; Surface potential

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; POISSON EQUATION; QUANTUM ELECTRONICS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; VARIATIONAL TECHNIQUES;

ACCUMULATION LAYER; INVERSION LAYER; QME; SURFACE POTENTIAL;

MOSFET DEVICES;

EID: 1242343882     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.010     Document Type: Article

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