A novel scaling-parameter-dependent subthreshold swing model for double-gate (DG) SOI MOSFETs: Including effective conducting path effect (ECPE)

Semiconductor Science and Technology

Volumn 19, Issue 12, 2004, Pages 1386-1390

  Chiang, T K ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICES; SILICA;

DOUBLE-GATE (DG) SOI MOSFETS; EFFECTIVE CONDUCTING PATH EFFECT (ECPE); SCALING DEVICE PARAMETER; SUBTHRESHOLD SWING MODELS;

MOSFET DEVICES;

EID: 10444244957     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/12/010     Document Type: Article

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