Gate CD control considering variation of gate and STI structure

IEEE Transactions on Semiconductor Manufacturing

Volumn 20, Issue 3, 2007, Pages 232-238

  Kurihara, Masaru ^a   Izawa, Masaru ^a   Tanaka, Jun'ichi ^a   Kawai, Kenji ^b   Fujiwara, Nobuo ^b  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Advanced process control (APC); Gate electrode; Prediction model; Shallow trench isolation

Indexed keywords

COMPUTER SIMULATION; ELECTRODES; FEEDFORWARD CONTROL; MICROWAVE ISOLATORS;

ADVANCED PROCESS CONTROL (APC); GATE ELECTRODE; PREDICTION MODEL; SHALLOW TRENCH ISOLATION;

PROCESS CONTROL;

EID: 34547784462     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2007.901837     Document Type: Conference Paper

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