Morphological evolution and lateral ordering of uniform SiGe/Si(0 0 1) islands

Microelectronics Journal

Volumn 37, Issue 12, 2006, Pages 1528-1531

  Stoffel, M ^a   Rastelli, A ^a   Merdzhanova, T ^a   Kar, G S ^a   Schmidt, O G ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Atomic force microscopy; Facets; Lateral ordering; SiGe islands

Indexed keywords

EPITAXIAL GROWTH; MORPHOLOGY; SEMICONDUCTOR GROWTH; SUBSTRATES;

FACETS; LATERAL ORDERING; SIGE ISLANDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33750707578     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.05.025     Document Type: Article

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