On the energetic origin of self-limiting trenches formed around Ge/Si quantum dots

Applied Physics Letters

Volumn 85, Issue 9, 2004, Pages 1586-1588

  Tambe, D T ^a   Shenoy, V B ^a  

^a Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC ENERGY; ELASTIC FIELDS; ELASTIC RELAXATION; LATTICE MISMATCH;

COMPUTER SIMULATION; EPITAXIAL GROWTH; FINITE ELEMENT METHOD; FREE ENERGY; INTEGRAL EQUATIONS; INTERFACIAL ENERGY; MATRIX ALGEBRA; RELAXATION PROCESSES; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; STRAIN; TENSORS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4944243338     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1787593     Document Type: Article

References (14)

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9. 2, which is typical for semiconductor surfaces.
10. A similar tensile strain at the top of islands has also been observed in calculations reported by H. T. Johnson and L. B. Freund, J. Appl. Phys. 81, 6081 (1997) and B. J. Spencer and J. Tersoff, Phys. Rev. B 63, 205424 (2001).
11. A similar tensile strain at the top of islands has also been observed in calculations reported by H. T. Johnson and L. B. Freund, J. Appl. Phys. 81, 6081 (1997) and B. J. Spencer and J. Tersoff, Phys. Rev. B 63, 205424 (2001).
12. 11.
13. We have also studied other trench geometries, in particular, wedge-shaped trenches considered in Ref. l and trenches shaped like circular arcs. Saturation of trench depths was observed in both of these geometric models.
14. The calculations for the pyramid-shaped islands were carried out using the finite element program ABAQUS.