Mechanism of threshold voltage shift (Δ Vth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2423-2425

  Liu, Chuan Hsi ^a   Lee, Ming T ^a   Lin, Chih Yung ^a   Chen, Jenkon ^a   Loh, Y T ^a   Liou, Fu Tai ^a   Schruefer, Klaus ^b   Katsetos, Anastasios A ^c   Yang, Zhijian ^c   Rovedo, Nivo ^c   Hook, Terence B ^c   Wann, Clement ^c   Chen, Tze Chiang ^c  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^b INFINEON TECHNOLOGIES   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Device physics; Gate oxide reliability; NBTI

Indexed keywords

DEGRADATION; THRESHOLD VOLTAGE;

DEVICE PHYSICS; GATE DIELECTRICS; GATE OXIDE RELIABILITY; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI);

MOSFET DEVICES;

EID: 0001215169     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/jjap.41.2423     Document Type: Article

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