On the origin of electrically active defects in AIGaN alloys grown by organometallic vapor phase epitaxy

Journal of Applied Physics

Volumn 80, Issue 11, 1996, Pages 6349-6354

  Polyakov, A Y ^a   Shin, M ^a   Freitas, J A ^b   Skowronski, M ^a   Greve, D W ^a   Wilson, R G ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b SFA INC   (United States)

^c Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000465857     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363653     Document Type: Article

References (27)

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