Growth and doping of AlxGa1-xN deposited directly on α(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 195-200

  Bremser, M D ^a   Perry, W G ^a   Edwards, N V ^a   Zheleva, T ^a   Parikh, N ^a   Aspnes, D E ^a   Davis, R F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; ENERGY GAP; FILM GROWTH; GRAIN BOUNDARIES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITRIDES; SEMICONDUCTOR DOPING; SILICON CARBIDE; SURFACES; THIN FILMS; X RAY CRYSTALLOGRAPHY;

ACCEPTOR DOPING; ALUMINUM NITRIDE; BANDGAP; GALLIUM NITRIDE; MONOCRYSTALLINE FILMS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0029745816     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)