Characteristics of Pt and TaN Metal Gate Electrode for High-κ Hafnium Oxide Gate Dielectrics

Electrochemical and Solid-State Letters

Volumn 7, Issue 3, 2004, Pages

  Choi, Kyu Jeong ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; GATES (TRANSISTOR); PERMITTIVITY; PLATINUM; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY;

GATE DIELECTRICS; GATE ELECTRODES;

DIELECTRIC MATERIALS;

EID: 1542574973     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1645754     Document Type: Article

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