Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

Journal of Crystal Growth

Volumn 305, Issue 2 SPEC. ISS., 2007, Pages 360-365

  Takeuchi, M ^a,b   Shimizu, H ^b   Kajitani, R ^b   Kawasaki, K ^b   Kinoshita, T ^c   Takada, K ^c   Murakami, H ^d   Kumagai, Y ^d   Koukitu, A ^d   Koyama, T ^e,f   Chichibu, S F ^e,f   Aoyagi, Y ^a,b  

^a RIKEN   (Japan)

^b Tokyo Institute of Technology ^*  (Japan)

^c TOKUYAMA CORPORATION   (Japan)

^d TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^e UNIVERSITY OF TSUKUBA   (Japan)

^f JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Crystal morphology; A1. High resolution X ray diffraction; A3. Low pressure metalorganic vapor phase epitaxy; B1. Nitrides; B2. Aluminum nitrides; B2. Semiconductor aluminum compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDATION; SECONDARY ION MASS SPECTROMETRY;

ALUMINUM NITRIDES; CRYSTAL MORPHOLOGY; HIGH-RESOLUTION X-RAY DIFFRACTION; LOW PRESSURE METALORGANIC VAPOR-PHASE EPITAXY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 34347329139     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.04.004     Document Type: Article

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