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Volumn 44, Issue 46-49, 2005, Pages

Defect structures of AlN on sapphire (0001) grown by metalorganic vapor-phase epitaxy with different preflow sources

Author keywords

AlN; Dislocations; Domains; Metalorganic vapor phase epitaxy; Sapphire

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); GROWTH (MATERIALS); SAPPHIRE; VAPOR PHASE EPITAXY;

DISLOCATIONS; DOMAINS; GEOMETRICAL ASPECTS; METALORGANIC VAPOR-PHASE EPITAXY;

ALUMINUM NITRIDE;

EID: 31844437722 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.L1400 Document Type: Article

Times cited : (18)

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