Buffer design for nitrogen polarity GaN on sapphire ( 0 0 0 1 ) by RF-MBE and application to the nanostructure formation using KOH etching

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 245-248

  Katayama, Ryuji ^a   Onabe, Kentaro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

GaN; KOH etching; Polarity; RF MBE

Indexed keywords

CONTROLLABILITY; CRYSTALLOGRAPHY; ELECTRON DIFFRACTION; ETCHING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PLASMAS; POTASSIUM COMPOUNDS; RADIOFREQUENCY SPECTROSCOPY; SAPPHIRE; SOLUTIONS; SUBSTRATES; THIN FILMS;

FILM POLARITIES; KOH ETCHING; POLARITY; RF-MBE;

GALLIUM NITRIDE;

EID: 33646181827     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.047     Document Type: Article

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