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Journal of Crystal Growth

Volumn 289, Issue 2, 2006, Pages 419-422

MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35

(3) Yu, Hongbo a Ulker, Erkin a Ozbay, Ekmel a

a BILKENT UNIVERSITY (Turkey)

Author keywords

A1. Doping; A3. Metalorganic chemical vapor deposition; B1. Nitride; B2. Semiconducting aluminum compounds

Indexed keywords

ALUMINUM; ELECTRIC CONDUCTIVITY; ELECTRIC LINES; GALLIUM NITRIDE; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING;

EPI-LAYERS; SAPPHIRE SUBSTRATES;

ALUMINUM NITRIDE;

EID: 33644855250 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.11.109 Document Type: Article

Times cited : (28)

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