Control of the gas phase and the surface reactions during the high rate synthesis of high quality microcrystalline silicon films: Effects of the source gas supply method and the substrate bias

Journal of Applied Physics

Volumn 101, Issue 11, 2007, Pages

  Jia, Haijun ^a,b   Shirai, Hajime ^b   Kondo, Michio ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DEPOSITION; MICROCRYSTALLINE SILICON; RELAXATION PROCESSES; SURFACE REACTIONS; SYNTHESIS (CHEMICAL);

DEPOSITED FILMS; HIGH FLUX FILM PRECURSORS; HIGH RATE SYNTHESIS; MICROCRYSTALLINE SILICON FILMS;

THIN FILMS;

EID: 34250662722     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2733739     Document Type: Article

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