Cathodoluminescence of defect regions in SiC epi-films

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 653-656

  MacMillan, M F ^a   Hultman, L ^a   Hallin, C ^a,b   Ivanov, I G ^a   Henry, A ^a,b   Janzen E ^a   Galloway, S A ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

^c OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

Author keywords

Cathodoluminescence; Micropipes 3C Defect Regions

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; INCLUSIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

MICROPIPES;

SEMICONDUCTING FILMS;

EID: 3743102649     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.653     Document Type: Article

References (4)

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