Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 455-458

  Scaltrito, L ^a   Porro, S ^a   Giorgis, F ^a   Mandracci, P ^a   Cocuzza, M ^a   Pirri, C F ^a   Ricciardi, C ^a   Ferrero, S ^a   Richieri, G ^b   Sgorlon, C ^b   Merlin, L ^b   Cavallini, A ^c   Castaldini, A ^c  

^a POLITECNICO DI TORINO   (Italy)

^b lntl Rectifier Corporation Italia   (Italy)

^c UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Defects; Electrical Characterization; Morphological Characterization; Schottky Diodes; Silicon Carbide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; PROFILOMETRY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

VOLTAGE REVERSE BREAKDOWN;

SCHOTTKY BARRIER DIODES;

EID: 0242581361     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.455     Document Type: Conference Paper

References (8)

1. P. Mandracci, S. Ferrero, C. Ricciardi, L. Scaltrito, G.Richieri, and C. Sgorlon, Thin Solid Films, submitted (2002)
2. M. Sasaki, Y. Nishino, S. Nakashima and H. Harima; Mater. Sci. Forum Vol. 264-268 (1998), p. 41-44.
3. W. Zhou, P. Pirouz and J.A. Powell; Mater. Sci. Forum Vol.264-268 (1998), p. 417-420.
4. S. Nakashima and H. Harina, Phys. Stat. Sol. (a) Vol. 162 (1997), p. 39-63
5. S. Ferrero, S. Porro, F. Giorgis, C. F. Pirri, P. Mandracci, C. Ricciardi, L. Scaltrito, C. Sgorlon, G. Richieri and L. Merlin, Journal of Physics: Condensed Matter, submitted (2002)
6. L.M. Porter and R. F. Davis, Mat. Sci. and Eng. B, Vol 34 (1995) p.83-105
7. A. Castaldini, A. Cavallini, L. Polenta, F.Nava, C. Canali, C. Lanzieri, Applied Surface Science Vol. 187 (2002) p. 248-252
8. N. Achtziger, W. Witthuhn, Appl. Phys. Lett. Vol. 71 (1997), p.110-112