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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 9 AB, 2003, Pages

Extended SiC defects: Polarized light microscopy delineation and synchrotron white-beam X-ray topography ratification

(4) Ma, Xianyun a Dudley, Michael b Vetter, William b Sudarshan, Tangali a

a The Department of Mechanical Engineering (United States)

b Stony Brook University (United States)

Author keywords

Defects; Micropipe; PLM; Screw dislocation; SiC; Silicon carbide; SWBXT

Indexed keywords

ATOMIC FORCE MICROSCOPY; CORRELATION METHODS; DISLOCATIONS (CRYSTALS); IMAGING TECHNIQUES; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES;

DELINEATION; MICROPIPE; POLARIZED LIGHT MICROSCOPY; SCREW DISLOCATION; SYNCHROTRON WHITE BEAM X RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 0345415174 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l1077 Document Type: Letter

Times cited : (25)

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