Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Schnabel, C M ^a   Tabib Azar, M ^a   Neudeck, P G ^b   Bailey, S G ^b   Su, H B ^c   Dudley, M ^c   Raffaelle, R P ^d  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c STONY BROOK UNIVERSITY   (United States)

^d ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; ELECTRON BEAMS; OPTICAL MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE; X RAY ANALYSIS;

ELECTRON BEAM INDUCED CURRENT (EBIC); SYNCHROTRON WHITE BEAM X RAY TOPOGRAPHY (SWBXT);

SCHOTTKY BARRIER DIODES;

EID: 0033704290     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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