Electronic defect states at annealed metal/4H-SiC interfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 2, 2005, Pages 594-598

  Tumakha, S ^a   Goss, S H ^a   Brillson, L J ^a   Okojie, R S ^b  

^a OHIO STATE UNIVERSITY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT STATES; LOCALIZED STATES; LOW ENERGY ELECTRON-EXCITED NANOSCALE LUMINESCENCE SPECTROSCOPY; SURFACE STATES;

ANNEALING; CHEMICAL BONDS; DEFECTS; ELECTRON SPECTROSCOPY; HYDROGEN; INTERFACES (MATERIALS); LUMINESCENCE; MORPHOLOGY;

SILICON CARBIDE;

EID: 24144460191     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1884124     Document Type: Conference Paper

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