Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 260, Issue 1, 2007, Pages 396-399

  van Kan, J A ^a   Bettiol, A A ^a   Watt, F ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Direct write; High aspect ratio; Proton beam writing

Indexed keywords

ASPECT RATIO; ERROR ANALYSIS; ION BEAM LITHOGRAPHY; NANOTECHNOLOGY; OLIGOMERS; POLYMETHYL METHACRYLATES; PROTON BEAMS;

HYDROGEN SILSESQUIOXANE (HSQ); PROTON BEAM WRITING; PROTON BEAM WRITING (PBW); SHELF LIFE;

PHOTORESISTS;

EID: 34249915493     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.02.051     Document Type: Article

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