Delay-time and aging effects on contrast and sensitivity of hydrogen silsesquioxane

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2932-2936

  Van Delft, Falco C M J M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; COMPUTER SIMULATION; ELECTRON BEAMS; HYDROPHOBICITY; SENSITIVITY ANALYSIS; SURFACE PHENOMENA; THERMAL EFFECTS; VACUUM APPLICATIONS;

AGING EFFECTS; DELAY TIME EFFECTS; ELECTRON BEAM RESIST; HYDROOGEN SILSESQUIOXANE; POSTEXPOSURE TREATMENTS; SOFTBAKE TEMPERATURE;

HYDROGEN INORGANIC COMPOUNDS;

EID: 0036883219     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1524980     Document Type: Article

References (5)

1. H. Namatsu, T. Yamaguchi, M. Nagase, K. Yamasaki, and K. Kurihara, Microelectron. Eng. 41/42, 331 (1998).
2. F. C. M. J. M. van Delft, J. P. Weterings, A. K. van Langen-Suurling, and J. Romijn, J. Vac. Sci. Technol. B 18, 3419 (2000).
3. B. E. Maile, W. Henschel, H. Kurz, B. Rienks, R. Polman, and P. Kaars, Jpn. J. Appl. Phys., Part 1 39, 6836 (2000).
4. H. Namatsu, J. Vac. Sci. Technol. B 19, 2709 (2001).
5. M. Peuker, M. H. Lim, H. I. Smith, R. Morton, A. K. van Langen-Suurling, J. Romijn, E. W. J. M. van der Drift, and F. C. M. J. M. van Delft, Microelectron. Eng. 61/62, 803 (2002).