Free-standing HVPE-GaN layers

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 1985-1988

  Larsson, H ^a   Gogova, D ^a,b   Kasic, A ^a   Yakimova, R ^a   Monemar, B ^a   Miskys, C R ^c   Stutzmann, M ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^c WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL OVERGROWTH; ETCH PIT DENSITY; GAN MATERIAL; HIGH QUALITY; HIGH-CRYSTALLINE QUALITY; HVPE GROWTHS; LOW TEMPERATURES; SAPPHIRE SUBSTRATES;

EPITAXIAL GROWTH; SAPPHIRE;

GALLIUM NITRIDE;

EID: 84875097111     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303333     Document Type: Conference Paper

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