Photoluminescence study of the 1.047 eV emission in GaN

Journal of Applied Physics

Volumn 79, Issue 6, 1996, Pages 3214-3218

  Pressel, K ^a   Nilsson, S ^a   Heitz, R ^b   Hoffmann, A ^b   Meyer, B K ^c  

^a IHP   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; IMPURITIES; INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSITION METALS;

EXCITED STATE SPLITTING; FINE STRUCTURE SPLITTING; GALLIUM NITRIDE; LUMINESCENCE CENTERS; NO PHONON LINES; PHONON SIDEBAND; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; SANDWICH TECHNIQUE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030108861     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361266     Document Type: Article

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