Carbon nanotube based nonvolatile memory devices

International Journal of High Speed Electronics and Systems

Volumn 16, Issue 4, 2006, Pages 959-975

  Zhang, Yuegang ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Carbon nanotube; FET; Floating gate; Nanocrystal; Non volatile memory device; Quantum dot; Single electron charging

Indexed keywords

CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; FLASH MEMORY; LEAKAGE CURRENTS; NANOCRYSTALS; NEMS;

CURRENT INJECTION EFFICIENCY; ELECTROSTATIC COUPLING; FLOATING GATE; SINGLE ELECTRON CHARGING;

NONVOLATILE STORAGE;

EID: 34249283019     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156406004107     Document Type: Article

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