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Diamond and Related Materials

Volumn 13, Issue 11-12, 2004, Pages 1967-1970

Memory effects of carbon nanotube-based field effect transistors

(4) Yang, D J a Zhang, Qing a Wang, S G a,b Zhong, G F c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b UNIVERSITY OF SURREY (United Kingdom)

c WASEDA UNIVERSITY (Japan)

Author keywords

Carbon nanotubes; Field effect transistor; Memory; Threshold voltage

Indexed keywords

CARBON NANOTUBES; ELECTRIC CHARGE; ELECTRIC FIELDS; ELECTRON TUNNELING; HYDROGEN; SHAPE MEMORY EFFECT; SILICON NITRIDE; THRESHOLD VOLTAGE;

GATE VOLTAGE; MEMORY EFFECTS; NONVOLATILE MEMORY; SINGLE-WALL CARBON NANOTUBES (SWNT);

FIELD EFFECT TRANSISTORS;

EID: 7544234583 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2004.07.023 Document Type: Conference Paper

Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.