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Volumn 13, Issue 11-12, 2004, Pages 1967-1970

Memory effects of carbon nanotube-based field effect transistors

Author keywords

Carbon nanotubes; Field effect transistor; Memory; Threshold voltage

Indexed keywords

CARBON NANOTUBES; ELECTRIC CHARGE; ELECTRIC FIELDS; ELECTRON TUNNELING; HYDROGEN; SHAPE MEMORY EFFECT; SILICON NITRIDE; THRESHOLD VOLTAGE;

EID: 7544234583     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.07.023     Document Type: Conference Paper
Times cited : (21)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.