Aluminum single-electron nonvolatile floating gate memory cell

Applied Physics Letters

Volumn 71, Issue 14, 1997, Pages 2038-2040

  Chen, C D ^a   Nakamura, Y ^a   Tsai, J S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001487557     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119780     Document Type: Article

References (13)

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