Optical and electrical properties of amorphous and microcrystalline GaN films and their application to transparent TFT

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 480-484

  Kobayashi, Satoshi ^a   Nonomura, Shuichi ^a   Ohmori, Takashi ^a   Abe, Koichi ^a   Hirata, Satoshi ^a   Uno, Takahito ^a   Gotoh, Tamihiro ^a   Nitta, Shoji ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

Amorphous GaN; Localized level; Microcrystalline GaN; Persistent photoconductivity; Thin film transistor

Indexed keywords

AMORPHOUS FILMS; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; SPUTTERING; THERMAL EFFECTS; THIN FILM TRANSISTORS;

GALLIUM NITRIDE; PERSISTENT PHOTOCONDUCTIVITY; REACTIVE SPUTTERING;

NITRIDES;

EID: 0031547250     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00872-0     Document Type: Article

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