Blue luminescence from amorphous GaN films deposited by pulsed-laser ablation at room temperature

Thin Solid Films

Volumn 472, Issue 1-2, 2005, Pages 11-15

  Shim, Seung Hwan ^a   Shim, Kwang Bo ^a,c   Yoon, Jong Won ^b   Shimizu, Yoshiki ^b   Sasaki, Takeshi ^b   Koshizaki, Naoto ^b  

^a Hanyang University   (South Korea)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NONE   (South Korea)

Author keywords

Amorphous materials; GaN; Laser ablation; Luminescence

Indexed keywords

AMORPHOUS MATERIALS; COMPOSITION; GALLIUM NITRIDE; LASER ABLATION; LIGHT EMITTING DIODES; LUMINESCENCE; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; STOICHIOMETRY;

GAN; HOMOPOLAR BONDS; OPTOELECTRONIC APPLICATIONS; POLYMER MATRIX;

SEMICONDUCTING FILMS;

EID: 10044219539     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.104     Document Type: Article

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