Properties of amorphous GaNx prepared by ion beam assisted deposition at room temperature

Journal of Applied Physics

Volumn 93, Issue 7, 2003, Pages 3954-3962

  Kang, Yixiu ^a   Ingram, David C ^a  

^a OHIO UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON DIFFRACTION; ELECTRON SPECTROSCOPY; FERMI LEVEL; ION BEAM ASSISTED DEPOSITION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SURFACE TOPOGRAPHY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

VACUUM CHAMBERS;

GALLIUM NITRIDE;

EID: 0037390122     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1555258     Document Type: Article

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