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Volumn 108, Issue 7, 1998, Pages 413-417
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Density dependence of the structural and electronic properties of amorphous GaN
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Author keywords
A. disordered systems; D. electron electron interactions; Electronic states (localized); Semiconductors
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Indexed keywords
AMORPHOUS MATERIALS;
CHARGE TRANSFER;
COMPUTER SIMULATION;
ELECTRON ENERGY LEVELS;
ELECTRONIC DENSITY OF STATES;
ELECTRONIC STRUCTURE;
ENERGY GAP;
MATHEMATICAL MODELS;
MOLECULAR DYNAMICS;
GALLIUM NITRIDE;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0032182527
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1098(98)00401-3 Document Type: Article |
Times cited : (25)
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References (16)
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