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Chemical Physics Letters

Volumn 398, Issue 1-3, 2004, Pages 264-269

The formation of SiGaN/SiOxNy nanocables and SiOxNy-based nanostructures using GaN as a resource of Ga

(5) Xu, Congkang a Kim, Misuk a Chung, Sangyong a Chun, Junghwan a Kim, Dong Eon a

a Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; GALLIUM NITRATE; SILICON DERIVATIVE;

ARTICLE; CHEMICAL STRUCTURE; CONTROLLED STUDY; NANOPARTICLE; SCANNING ELECTRON MICROSCOPY; STRUCTURE ANALYSIS; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 5744221733 PISSN: 00092614 EISSN: None Source Type: Journal
DOI: 10.1016/j.cplett.2004.09.066 Document Type: Article

Times cited : (8)

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