Near-edge X-ray absorption fine-structure studies of GaN under low-energy nitrogen ion bombardment

Applied Surface Science

Volumn 252, Issue 10, 2006, Pages 3413-3416

  Coleman, V A ^a   Petravic M ^a   Kim, K J ^b   Kim, B ^b   Li, G ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c ShenZhen FangDa GuoKe Optronics Technical Co Ltd   (China)

Author keywords

GaN; NEXAFS; Nitrogen ion bombardment

Indexed keywords

ABSORPTION; ION BOMBARDMENT; X RAYS;

MOLECULAR NITROGEN; NEXAFS; NITROGEN ION BOMBARDMENT;

GALLIUM NITRIDE;

EID: 32644473198     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.06.007     Document Type: Article

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