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Solid State Communications

Volumn 136, Issue 6, 2005, Pages 351-355

Local environment of nitrogen in GaNyAs1-y epilayers on GaAs (0 0 1) studied using X-ray absorption near edge spectroscopy

(6) Gupta, J A a Dharma Wardana, M W C a Jurgensen A b Crozier, E D c Rehr, J J d Prange, M d

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

b Synchrotron Radiation Center (United States)

c SIMON FRASER UNIVERSITY (Canada)

d UNIVERSITY OF WASHINGTON (United States)

Author keywords

A. GaAsN; A. GaNAs; D. Molecular beam epitaxy; E. X ray absorption spectroscopy; E. XANES

Indexed keywords

ABSORPTION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; POLARIZATION; PROBABILITY DENSITY FUNCTION; SCATTERING;

GAASN; GANAS; X-RAY ABSORPTION SPECTROSCOPY (XANES); XANES;

GALLIUM NITRIDE;

EID: 25644448899 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2005.08.018 Document Type: Article

Times cited : (4)

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